Formation of Buried Oxide in Mev
نویسندگان
چکیده
We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2xl018 /cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried Si02 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the Si02.
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